FORMATION METHOD OF METAL DISTRIBUTION

摘要

PURPOSE: A metal distribution formation is provided by lowering a contact resistance value, and by removing the problems to weaken an adhesion because of the penetration of fluorine gas. CONSTITUTION: A formation method of the metal distributions contains the following processes: a process to deposit in vapor the dielectric layers having the contact holes so as to disclose a region in semiconductor substrate; a process to deposit in vapor the thin barrier layers and cobalt layers orderly thereon; a process to grow up the cobalt silicide layers below the contact holes being contacted the semiconductor substrate and the barrier layers by rapid thermal process; and a process to form the metal distribution layers in the contact holes and on the cobalt layers.