| 摘要 |
PURPOSE: A method for smoothing a semiconductor device is provided to suppress a dishing phenomenon generated in a CMP process to simplify following processes by sequentially forming three insulating films having different polishing speed, thereby enhancing the yield and productivity of the semiconductor device. CONSTITUTION: First, a diffusion barrier layer(15) is formed on a semiconductor substrate(11) by a CVD process. Then, first to third insulating films(17,19,21) are sequentially formed on the diffusion barrier layer(15). The first to third insulating films(17,19,21) are etched by a CMP process to smoothen top part. Finally, the impurities of the first to third insulating films(17,19,21) on a portion in which patterns aren't densified are diffused, thereby forming a fourth insulating film of homogeneous quality.
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