THIN FILM TRANSISTOR AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To prevent a leakage current from occurring in a thin film transistor due to a film that is left unremoved at etching, by a method wherein an opening is provided to a region that electrically connects a semiconductor layer of a channel protective film to a source electrode and a drain electrode. SOLUTION: A metal film of Ta, Al or the like is formed on a glass substrate 1 through sputtering, the metal film is patterned into a gate electrode 2, and then a gate insulating film 3 of SiNx and a semiconductor layer 4 are successively formed thereon. The semiconductor layer 4 is patterned into an island on the gate electrode 2, and then a trench-shaped channel protective film 5 is formed thereon. Furthermore, an N+ semiconductor layer is formed, then a source electrode 6 and a drain electrode 7 are formed, and an opening is provided to a region that electrically connects the electrodes 6 and 7 to the N+ semiconductor layer. By this setup, a leakage current can be prevented from occurring due to a film that is left unremoved at etching.