SEMICONDUCTOR ENERGY DETECTOR

摘要

A semiconductor energy detector comprises aluminum wiring patterns on the surface of the transfer electrodes of a CCD vertical shift register, and the wiring patterns include auxiliary conductors (101-103) formed in zigzag patterns and having auxiliary functions, and additional conductors (111, 112, 122, 123) for assisting in applying transfer voltage independently of the auxiliary conductors. The conductors are connected with the corresponding transfer electrodes. High-speed and high-efficiency charge transfer is achieved while solving the problem with the wiring resistance in the polysilicon transfer electrodes.