发明名称 |
Method of manufacturing a MOSFET by forming a single oxide layer doping with either an oxide accelerator or an oxide inhibitor producing asymmetric thickness |
摘要 |
A thick oxide layer is formed over a drain region of an MOS transistor while a thin oxide layer is provided over the source and channel regions. As a result both improved current driving ability and reduced gate induced drain leakage current are achieved.
|
申请公布号 |
US6087237(A) |
申请公布日期 |
2000.07.11 |
申请号 |
US19970876429 |
申请日期 |
1997.06.16 |
申请人 |
L.G. SEMICON CO., LTD |
发明人 |
HWANG, HYUN SANG |
分类号 |
H01L21/8247;H01L21/265;H01L21/28;H01L21/336;H01L27/10;H01L27/115;H01L29/08;H01L29/78;H01L29/788;H01L29/792;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/8247 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|