发明名称 Feldeffekttransistor und diesen Transistor enthaltende Hochfrequenzschaltungen
摘要 <p>A FET comprising two or more gate pads or terminals, and a reflexion type-oscillator including the above-mentioned FET. In this oscillator, a dielectric resonator is connected through a coupling line to the first gate pad of the FET and an output terminal is connected to the second pad. When the drain pad of FET is connected to ground, and a suitable value of capacitive reactance is added to the source pad, then a negative resistance -R appears on the first gate pad, and thus oscillation occurs at a resonance frequency fo of the dielectric resonator. If the load resistance value viewed from the second gate pad is set to R, the maximum oscillation output occurs. Accordingly this oscillator enables to set the oscillation conditions between the source and gate pads of the FET, and the output matching conditions between the second gate pad and the output terminal separately, and thus allows to set the oscillation conditions and the output matching conditions, respectively, simultaneously to the best. <IMAGE> <IMAGE></p>
申请公布号 DE69231115(D1) 申请公布日期 2000.07.06
申请号 DE1992631115 申请日期 1992.07.22
申请人 NEC CORP., TOKIO/TOKYO 发明人 NAGASAKO, ISAMU
分类号 H01L27/06;H01L21/338;H01L21/8232;H01L29/423;H01L29/812;H03B5/18;H03B7/14;H03D9/06;(IPC1-7):H01L29/423;H01L23/64 主分类号 H01L27/06
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