发明名称 HIGH LINEARITY, LOW OFFSET INTERFACE FOR HALL EFFECT DEVICES
摘要 A Hall effect sensor (10) or device may be used in a variety of embodiments, such as measuring current within an associated conductor by helping to measure flux density within a gap of a ferromagnetic power meter core, such as in a power meter. A high linearity interface for a Hall effect device is provided for minimizing offset effects without using complicated electronic circuits. First (48) and second (50) levels of modulation relative to line frequency (42) are used to synchronize Hall effect device input switching circuits and feedback loops for improved elimination of offset signals or noise from the ultimate system output. The substrate (12) of the Hall effect device may be connected electrically to an output pin of the Hall device or to a separate virtual ground to eliminate any effects caused by asymmetry of the voltage appearing in the channel relative to the substrate. The net effect of the high linearity interface is to eliminate any adverse effects to linearity of the system, especially at low magnetic flux levels where the output voltage of the Hall device would be relatively small compared to the offset voltage levels involved. The interface virtually eliminates adverse effects from operational amplifier input offset voltages, Hall effect device output offset voltages, and any common mode voltages.
申请公布号 WO0020822(A3) 申请公布日期 2000.07.06
申请号 WO1999US23357 申请日期 1999.10.07
申请人 SCHLUMBERGER RESOURCE MANAGEMENT SERVICES, INC. 发明人 LANCASTER, ANDREW;KOBBI, FARAH;GERVAIS, MICHEL;GOODWIN, WENDELL;HEINZ-BUETHE, KARL
分类号 G01R15/20;G01R21/08;(IPC1-7):G01R33/06;G01R21/00;G01R33/00 主分类号 G01R15/20
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