METHOD OF FORMING INTERLAYER INSULATING FILM IN SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of forming an interlayer insulating film is to prevent a peel-off defect between an interlayer insulating film composed of multi-layers form being generated. CONSTITUTION: A method of forming an interlayer insulating film comprises the steps of: providing a wiring(23) on a substrate(21) and forming on the substrate a first interlayer insulating film(25) covering the wiring; coating on the first interlayer insulating film insulation material with good fluidity, to form a second interlayer insulating film(27) having a flat surface; reacting the surface of the second insulating film with O2 plasma to form a third interlayer(29) insulating film having an unstable bonding state and a coarse surface; and forming a fourth interlayer insulating film, which fourth interlayer insulating film effecting a stable bonding state at a surface contacting the third interlayer insulating film by mutual atomic exchange and rearrangement.