METHOD FOR MANUFACTURING ELECTRIC FIELD DISCHARGING DISPLAY DEVICE

摘要

PURPOSE: A method for manufacturing an electric field discharging display device is provided to reduce the interval between a gate electrode and a tip by forming a gate oxide film and a gate electrode material by the APCVD method and the sputtering method. CONSTITUTION: A cylindrical sacrifice layer is formed on the upper portion of a silicon substrate. Then, the silicon substrate is etched. A polysilicon layer is deposited on the surface of the silicon substrate and the surface of the sacrifice layer. A spacer is formed on the side walls of the sacrifice layer and the silicon substrate. A material for a gate oxide film is deposited on the upper portion of the structure. A material for a gate electrode is deposited on the upper portion of the material for a gate oxide film. A gate electrode is formed by patterning the material for a gate oxide film. A gate oxide film is formed by etching the material for a gate oxide film. The sacrifice layer is removed.