发明名称 |
HORIZONTAL LOW PRESSURE CHEMICAL VAPOR DEPOSITING APPARATUS WITHOUT DEPLETION EFFECT |
摘要 |
PURPOSE: A horizontal low pressure chemical vapor depositing apparatus of a semiconductor device is provided to deposit a uniform thickness thin film on a semiconductor substrate by removing the depletion effect. CONSTITUTION: A horizontal low pressure chemical vapor depositing apparatus comprises a wafer boat(21) in which a plurality of semiconductor wafers(33) are vertically loaded. The wafer boat(21) is surrounded by an inner tube(43). The inner tube(43) is surrounded by an outer tube(53). A heater(25) for generating heat is provided to surround the outer tube(53). A first gas inlet(27) is positioned at a first terminal end of an active furnace. A second gas inlet(37) is positioned at a second terminal end of the active furnace which is opposite to the first terminal end(27).
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申请公布号 |
KR20000038419(A) |
申请公布日期 |
2000.07.05 |
申请号 |
KR19980053417 |
申请日期 |
1998.12.07 |
申请人 |
HYUNDAI MICRO ELECTRONICS CO., LTD. |
发明人 |
SEONG, GI CHEON |
分类号 |
H01L21/205;(IPC1-7):H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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