发明名称 HORIZONTAL LOW PRESSURE CHEMICAL VAPOR DEPOSITING APPARATUS WITHOUT DEPLETION EFFECT
摘要 PURPOSE: A horizontal low pressure chemical vapor depositing apparatus of a semiconductor device is provided to deposit a uniform thickness thin film on a semiconductor substrate by removing the depletion effect. CONSTITUTION: A horizontal low pressure chemical vapor depositing apparatus comprises a wafer boat(21) in which a plurality of semiconductor wafers(33) are vertically loaded. The wafer boat(21) is surrounded by an inner tube(43). The inner tube(43) is surrounded by an outer tube(53). A heater(25) for generating heat is provided to surround the outer tube(53). A first gas inlet(27) is positioned at a first terminal end of an active furnace. A second gas inlet(37) is positioned at a second terminal end of the active furnace which is opposite to the first terminal end(27).
申请公布号 KR20000038419(A) 申请公布日期 2000.07.05
申请号 KR19980053417 申请日期 1998.12.07
申请人 HYUNDAI MICRO ELECTRONICS CO., LTD. 发明人 SEONG, GI CHEON
分类号 H01L21/205;(IPC1-7):H01L21/205 主分类号 H01L21/205
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