发明名称 METHOD FOR APPROACHING FLASH MEMORY
摘要 PURPOSE: An approaching method of flash memory is provided to complete a slow access time by updating only small data and to increase an operating speed and a life of flash memory by minimizing a necessity of erase time. CONSTITUTION: Data areas not used at present are erased among plural data area until a writing operation of flash memory is not performed and it is stand-by until the erase operation is finished. When the present used data area are filled all in finished the erase operation during watching a state if the present used data area are filled all, a data of final block is copied to a first block of an area finished the erase operation. An invalid block flag is set to inform that a data of an area used newly is valid. Moreover, other variables related with the operation are updated together.
申请公布号 KR20000039727(A) 申请公布日期 2000.07.05
申请号 KR19980055139 申请日期 1998.12.15
申请人 LG ELECTRONICS INC. 发明人 KU, JUN MO
分类号 G11C16/02;(IPC1-7):G11C16/02 主分类号 G11C16/02
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