| 摘要 |
PURPOSE: A semiconductor device and a method for fabricating the semiconductor device are provided to prevent the cross talk phenomenon causing a noise by forming an auxiliary well at a lower portion of a twin well. CONSTITUTION: A semiconductor device comprises a semiconductor substrate(200) including a digital section(c) and an analog section(d). A plurality of first conductive wells(28,29) and second conductive wells(30,31) are alternately formed on an active area of the semiconductor substrate(200). A second conductive auxiliary well(27) is formed at a lower portion of the first and second conductive wells(28,29,30,31) of the analog section so as to surround the first and second conductive wells(28,29,30,31). A plurality of transistors are formed on the first and second conductive wells(28,29,30,31).
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