发明名称 Plasma etching chamber for manufacturing semiconductor devices
摘要 A plasma etching apparatus used in the semiconductor device fabrication process improves the uniformity of the etch process by ensuring the uniformity of a plasma gas. The apparatus includes magnetic coils surrounding an outer wall of an etching chamber for generating a magnetic field within the chamber to guide a plasma etch gas created by radio frequency (RF) energy. A power cable is connected to the magnetic coils for supplying power. A bracket, made of an insulating material, is attached at one side to the outer wall of the etching chamber and at an opposing side to the power cable.
申请公布号 US6082295(A) 申请公布日期 2000.07.04
申请号 US19980185092 申请日期 1998.11.03
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, SANG-YEOUL
分类号 C23F4/00;H01J37/32;H01L21/302;H01L21/306;H01L21/3065;(IPC1-7):C23C16/00 主分类号 C23F4/00
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