发明名称 |
Plasma etching chamber for manufacturing semiconductor devices |
摘要 |
A plasma etching apparatus used in the semiconductor device fabrication process improves the uniformity of the etch process by ensuring the uniformity of a plasma gas. The apparatus includes magnetic coils surrounding an outer wall of an etching chamber for generating a magnetic field within the chamber to guide a plasma etch gas created by radio frequency (RF) energy. A power cable is connected to the magnetic coils for supplying power. A bracket, made of an insulating material, is attached at one side to the outer wall of the etching chamber and at an opposing side to the power cable.
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申请公布号 |
US6082295(A) |
申请公布日期 |
2000.07.04 |
申请号 |
US19980185092 |
申请日期 |
1998.11.03 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, SANG-YEOUL |
分类号 |
C23F4/00;H01J37/32;H01L21/302;H01L21/306;H01L21/3065;(IPC1-7):C23C16/00 |
主分类号 |
C23F4/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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