| 摘要 |
A method for fabricating an integrated circuit includes the steps of forming an isolating insulation film on a portion of a semiconductor substrate, forming a gate insulating film, a first conductive layer, an insulating film and a second conductive layer successively on the semiconductor substrate including the isolating insulation film, selectively removing the second conductive layer and the insulating film to pattern an upper electrode of a capacitor in a capacitor forming region and a dummy gate electrode in a transistor forming region, respectively, forming a lower electrode mask in the capacitor forming region, and selectively removing the first conductive layer and the gate insulating film by using the lower electrode mask and the dummy gate electrode as masks, to form a lower electrode of the capacitor and the gate electrode of the transistor.
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