发明名称 Controllability of a buried device layer
摘要 Reduced variations in buried layer across the chip is provided. The reduction in variation is achieved by defining the top surface of the buried layer and then the lower surface of the buried layer. This results in improved control buried strap variations, thereby improving performance of the IC.
申请公布号 US6080618(A) 申请公布日期 2000.06.27
申请号 US19980052683 申请日期 1998.03.31
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 BERGNER, WOLFGANG;ALSMEIER, JOHANN
分类号 H01L27/04;H01L21/822;H01L21/8242;H01L27/108;(IPC1-7):H01L2/824 主分类号 H01L27/04
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