Multiple bit magnetic memory cell

摘要

A multiple bit magnetic memory cell includes a data storage layer having a shape which is preselected to provide at least three domain states wherein each domain state corresponds to a particular logic state and a particular orientation of magnetization in the data storage layer. The multiple bit magnetic memory cell includes a reference layer having a fixed orientation of magnetization which is defined by an angle of orientation wherein the angle of orientation is preselected to distinguish the domain states of the data storage layer.