发明名称 Differential amplifier with lateral bipolar transistor
摘要 The present invention provides a differential amplifier. The differential amplifier includes first and second inputs and an output. The differential amplifier further includes a lateral bipolar transistor. The lateral bipolar transistor includes a well region that has a base region, an emitter region and first and second collector regions. The first and second collector regions are spaced apart from the emitter. The lateral bipolar transistor also includes a first gate, coupled to the first input, to overlay a space between the emitter region and the first collector region. Furthermore, the lateral bipolar transistor includes a second gate, coupled to the second input, to overlay a space between the emitter region and the second collector region. The differential amplifier further includes first and second load devices coupled to the first and second collector regions.
申请公布号 US6081139(A) 申请公布日期 2000.06.27
申请号 US19970937907 申请日期 1997.09.25
申请人 INTEL CORPORATION 发明人 LIEPOLD, CARL F.;DOYLE, JAMES T.
分类号 H01L27/07;H03F3/45;H03K5/24;(IPC1-7):H03K5/22;H03K17/60 主分类号 H01L27/07
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