NOVEL PROCESS FOR RELIABLE ULTRA THIN OXYNITRIDE FORMATION

摘要

PURPOSE: A process is provided for precise thickness control, improved interface structure, low density of electron traps, to impede dopant impurity diffusion from the dielectric and substrate, and to be easily integrated into existing manufacturing processes, and adds little increased costs CONSTITUTION: A process for growing an ultra thin dielectric layer for use as a MOSFET gate oxide or a tunnel oxide for EEPROM's is described. A silicon oxynitridelayer, with peaks in nitrogen concentration at the wafer oxynitride interface and at the oxynitride surface and with low nitrogen concentration in the oxynitride bulk, is formed by a series of anneals in nitric oxide and nitrous oxide gas. This process provides.