| 摘要 |
PROBLEM TO BE SOLVED: To protect a ferroelectric oxide material, particularly a ferroelectric layer super lattice material from hydrogen deterioration, by providing a protection layer and an integrated circuit including a thin film made of a ferroelectric oxide material, and making the protection layer contain a small amount of oxygen. SOLUTION: A protection layer, in this case, a hydrogen barrier layer 130 with electrical conductivity is stacked on an upper electrode 126. The hydrogen barrier layer 130 contains titanium nitride and a small amount of oxygen is contained at the top and around the bottom. An area 131 disposed under the hydrogen barrier layer 130 extends upward from the bottom by about 10 to 20% of a thickness of the layer 130. In the same manner, an area 133 disposed on the hydrogen barrier layer 130 extends downward from the top by about 10 to 20% of a thickness of the layer 130. The small amount of oxygen is enough to decorate a grain boundary in the areas 131 and 133. TiON positioned at the grain boundary increases activation energy for hydrogen diffusion at the grain boundary. Thus, it is possible to prevent hydrogen diffusion through the layer 130. |
