| 摘要 |
PROBLEM TO BE SOLVED: To evaluate the pattern of a semiconductor device. composed of multiple layers. SOLUTION: In this method, an SEM picture in which a pattern constituted in two or more layers can be observed simultaneously is obtained by scanning a sample with an electron beam (1-2) and the histogram of the concentration of the SEM picture is prepared (3). Then a threshold is decided from the histogram and the picture is N-ary coded, based on the threshold (4), and the pattern of each layer is labeled, based on the concentration (5). In addition, the contour to the pattern of each layer is extracted, based on the labeled results (8), and the intersection of the contour of the pattern of each layer is extracted. Thereafter, the contour of the lower-layer pattern concealed by the upper-layer pattern is decided by performing interpolation on the contour of the pattern corresponding to the lower layer near the intersection and the area, circumferential length, and horizontal and vertical distances of the area surrounded by the contours of the lower- and upper-layer patterns decided by using the intersection as an apex are calculated. |
