| 摘要 |
PROBLEM TO BE SOLVED: To provide an ion implantation device provided with a wafer support for minimizing a fluctuation of an implantation angle. SOLUTION: A rotary support for a wafer workpiece is provided in an ion implantation chamber. The rotary support includes a hub 112 for rotating around a rotation axis approximately parallel to a direction of an ion beam entering the implantation chamber, and a plurality of wafer support members 120 for supporting each workpiece mounted on the hub. The wafer support member includes a mounting part 150 fixed to the rotating hub and a wafer support pad 130 which crosses a beam line when the hub rotates. The support pad includes a wafer support surface having a recessed part. The recessed part has a cylindrical shape, and the curvature radius is large. When a wafer has a diameter of 30 cm, the curvature radius is 7 m. Each of the support members 120 includes a clamp 210 for detachably fixing a workpiece. When the hub rotates, a workpiece corresponds to a recessed shape of the recessed part which is vertical to the support surface by a component of a centrifugal force.
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