发明名称 |
RESIST COMPOSITION, PATTERN FORMING METHOD AND MANUFACTURE OF PHASE SHIFT MASK BY USING IT |
摘要 |
PROBLEM TO BE SOLVED: To provide novel chemically amplifiable resist composition superior in dimensional controllability in the industrially profitable pattern forming method using an aqueous alkaline developing solution. SOLUTION: This resist composition contains at least (a) a base resin and (b) a compound to be allowed to release an acid by irradiation with radiation and (c) a medium to be modified to a material affinitive to a developing medium in the presence of the acid. The dissolution velocity of the resist composition containing 100 pts.wt. of this component (a) and 10 pts.wt. of the component (c) into the prescribed developing medium drops to <=1/100 of the dissolution velocity containing only the component (a) into the medium, and the (a) component is controlled to an acid diffusion distance of <=0.5 nm/sec through the resist film containing the components (a) and (c) formed on a substrate at a temperature of >=100 deg.C. |
申请公布号 |
JP2000162774(A) |
申请公布日期 |
2000.06.16 |
申请号 |
JP19980335258 |
申请日期 |
1998.11.26 |
申请人 |
HITACHI LTD;HITACHI CHEM CO LTD |
发明人 |
SAKAMIZU TOSHIO;SHIRAISHI HIROSHI;ARAI TADASHI;KATO KOJI |
分类号 |
H01L21/027;C08J7/14;C08J7/18;C08L101/00;G03F1/26;G03F1/68;G03F1/80;G03F7/004;G03F7/039;G03F7/26 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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