THIN-FILM INTEGRATED ELEMENT

摘要

PROBLEM TO BE SOLVED: To perform off-set control with a TFT(thin-film transistor), without forming an LDD(lightly-doped drain) region and to provide a structure of thin- film integrated element, wherein the light incident from a transparent insulating substrate side is shielded surely. SOLUTION: A light-shielding film 2 formed on a transparent insulating substrate 1 and a thin-film transistor formed on the light-shielding film via an insulating film 3 are provided, and the light-shielding film is formed wider than the channel region of the thin-film transistor using a conductive material, functioning as a sub-gate electrode to an off-set region of the thin-film transistor, while a ratio between a distance (b) between the light-shielding film and the central vicinity of the channel region and a distance (a) between the light- shielding film and the off-set region is 5:1 or larger.