| 摘要 |
PURPOSE: A method for manufacturing arrays of optoelectronic device is provided to fabricate field emitting devices at relatively high pressure and to achieve high yield and reproducibility, wherein the field emitting device has a large field emitting area and generates a large emitting current at low supply voltage. CONSTITUTION: A method for manufacturing arrays of an optoelectronic device comprises forming electronic devices(2) on a silicon substrate(1), depositing an insulation film(3) on the electronic devices(2) at low temperature, planarizing the insulation film(3), opening vias(4) in the insulation film(3), filling the vias(4) with a conductive material(5), depositing a metal layer(6) on the insulation film(3) and conductive material(5), depositing another insulation film(7) on the metal layer(6) at low temperature, forming pinholes(8) in the insulation film(7), selectively growing carbon nanotubes(9) only on the metal layer(6) inside the pinholes(8) by CVD, filling the pinholes(8) with a liquid-phase insulating material(10), hardening the insulating material(10), attaching a conductive material(11) on the insulation film(7) and insulating material(10), and attaching a fluorescent material on the conductive material(11)
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