| 摘要 |
PURPOSE: A semiconductor laser and a method for manufacturing the same are provided to allow ease control of a longitudinal mode, improve the light emitting efficiency and astigmatism, and avoid diffusion of impurities due to grown active layer after a thermal etching process using As. CONSTITUTION: A semiconductor laser includes a substrate(1) made of n-GaAs, etc., a lower buffer layer(2) made of n-GaAs, etc., the first spacer(3) made of n-InGaP, etc., the first lower clad layer(4) made of n-AlGaAs, etc., the second spacer(5) made of n-InGaP, etc., the second lower clad layer(6) made of n-AlGaIn, etc., an active layer(7) made of GaInP, etc., an upper clad layer(8) made of p-AlGaInP, etc., an upper buffer layer(9) made of p-InGaP, etc., and a cap layer(10) made of p+/-GaAs, etc. The first lower clad layer(AlX Ga1-x(x=0.7))(4) and the second lower clad layer(AlGaInP)(6) constitute a dual-clad layer and form a ridge stripe. Thus, leakage of current can be prevented and optical efficiency can be improved.
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