发明名称 |
Method of making straight wall containers and the resultant containers |
摘要 |
A method for providing semiconductor openings having a substantially straight wall or other desired etch profile. An etchable material layer is formed having target dopant levels or other etch rate varying characteristics to compensate for the characteristics of a selected etching process to achieve the desired etch profile. The etching process may also be varied to further match the characteristics of the etchable material layer. |
申请公布号 |
AU1465800(A) |
申请公布日期 |
2000.06.13 |
申请号 |
AU20000014658 |
申请日期 |
1999.11.05 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
GURTEJ S. SANDHU;CEREDIG ROBERTS |
分类号 |
H01L21/02;H01L21/311;H01L21/316;H01L21/8242 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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