发明名称 |
Method for producing an integrated circuit processed on both sides |
摘要 |
A method for producing an integrated circuit wherein a substrate is provided that includes a circuit structure and a first metalization structure disposed thereover comprising at least one layer with plated holes extending therethrough and into the circuit structure. The plated holes are insulated and a planarizing layer is disposed over the metalization structure. A handling wafer is applied over the substrate permitting the substrate to be thinned such that metalized connections disposed in the plated holes are exposed. A second metalization structure is provided and connected to the circuit structure and/or the first metalization structure by the metalized connections. |
申请公布号 |
AU1271900(A) |
申请公布日期 |
2000.06.13 |
申请号 |
AU20000012719 |
申请日期 |
1999.11.17 |
申请人 |
GIESECKE & DEVRIENT GMBH |
发明人 |
THOMAS GRASSL |
分类号 |
H01L21/768;H01L21/822;H01L27/00;H01L27/04 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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