| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a thin film capable of suppressing the inclusion of impurities and generation of physical defects or removing the impurities and defects in the thin film and on the grain boundaries. SOLUTION: The surface of a substrate loaded on a reaction chamber is subjected to treatment for terminating with specified atoms, and a 1st reactant is allowed to chemically adsorb on the substrate. Subsequently, the 1st reactant physically adsorbed on the substrate is removed, a 2nd reactant is introduced into the reaction chamber, and, by the chemical substitution or reaction between the chemically adsorbed 1st reactant and the 2nd reactant, a solid thin film is formed. In this way, the thin film can be grown on the substrate so that impurities and physical defects are inexistent in the thin film and on the grain boundaries or their concentration is reduced.
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