| 摘要 |
905,625. Magnetic storage devices. INTERNATIONAL COMPUTERS & TABULATORS Ltd. Nov. 4, 1959 [Dec. 24, 1958], No. 41695/58. Class 38 (2). [Also in Group XXXIX] A thin ferro-magnetic film 1, Fig. 1, has two outer switching areas overlapped by respective strip conductors 6, 7, and an intermediate storage area 3 associated with a read-out conductor 5, the remanent state of the storage area being reversed when both the switching areas are brought to the same reversed remanent state by current in their respective windings. The storage area may be restored to its original state by reversed currents in the strips, a read-out signal being induced in conductor 5. In one arrangement it is not possible for a single switching area to have an opposite remanent state to the storage area, and coincident currents in the conductors 6 and 7 are necessary for a reversed remanent state to be stored. This arrangement may be used as an AND gate or may comprise a single storage element in a storage matrix, Fig. 2. As shown, separate films 1 of ferromagnetic material are deposited by vacuum evaporation on to an insulating substrate 2, e.g. glass, and are covered by a vacuum-evaporated layer of insulating material such as magnesium fluoride before the conductive strips are applied by a similar process or by a printing technique. The lower half of each read-out conductor may be deposited and covered with an electrically-insulating layer before the magnetic film is deposited. The conductor upper half is then deposited after the magnetic film is insulated. The films may have areas of different thickness or composition to improve the switching time. In Fig. 2 the conductive strips 9, 10 constitute the row and column conductors respectively, and due to the alternating directions of the row strips it is necessary for currents from the column selection network 12 to be in opposite directions in alternate strips. A modification is described, Fig. 3 (not shown), in which the separate films are replaced by using discrete regions of a continuous film extending over the matrix area. It is stated that non-destructive reading of a storage area may be effected by switching this area only towards the initial remanent state. When the switching current terminates the area is restored to its reversed state, if switched from that state, by the remanent fields of the switching areas. An alternative form of storage element is described in which the switching areas are so dimensioned and composed that each may be reversed in state and remain there when the associated conductor is pulse energized. Under these circumstances the storage area is switched when both strip conductors are pulsed either coincidently or non-coincidently. An OR gate may be formed by a number of storage elements with connected output conductors, each element having a biased switching conductor. Also a single storage element may operate as a AND NOT gate by setting and resetting the storage area. Specifications 880,383 and 882,461 are referred to. |
