| 摘要 |
PURPOSE: A semiconductor memory device having a multi-bank structure is provided. CONSTITUTION: An array of a semiconductor memory device(100) is divided into a plurality of banks(120). Each bank(120) includes a plurality of memory cells for storing information. In addition, each bank(120) comprises circuits for selecting columns and rows, a sensing amplification circuit and a data output buffer circuit. The semiconductor memory device(100) further includes a selection signal generating circuit(160) and voltage boosting circuits(140-148). The selection signal generating circuit(160) sequentially generates selection signals in response to a clock signal, and each voltage boosting circuit(140-148) generates a high voltage to be provided to at least one selected bank in response to the corresponding selection signal during the normal operation. In constitution, the number of the voltage boosting circuits(140-148) is smaller than that of the banks(120).
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