| 摘要 |
The inventive three-level infrared bolometer includes an active matrix level (210), a support level (220), posts (270) and an absorption level (230). The active matrix level (210) includes a substrate (212) having an integrated circuit, connecting terminals (214) and a protective layer (216) covering the substrate (212). The support level (220) includes bridges (240), each of the bridges (240) being provided with a conduction line formed on top thereof, wherein one end of the conduction line (265) is electrically connected to the respective connecting terminal (214). The absorption level (230) includes an absorber (295), a bolometer element (285) surrounded by the absorber (295), a titanium thin film (297) on top of the absorber (295) and an infrared absorber coating (299) made of silicon oxy-nitride and formed on top of the titanium thin film (297), the infrared absorber coating (299) having multipores therein and a rough top surface as a result of the titanium film surface not providing enough nucleation sites for it to grow stably. Each of posts (270) includes an electrical conduit (272) surrounded by an insulating material and is placed between the absorption level (230) and the bridge (240), in such a way that the serpentine bolometer element (285) is electrically connected to the integrated circuit through the electrical conduit (272), the conduction line (265) and the connecting terminal (214). |
