| 摘要 |
Nitrogen-containing III-V alloy semiconductor materials have both a conduction band offset DELTA Ec and a valence band offset DELTA Ev large enough for the practical applications to light emitting devices. The semiconductor materials are capable of providing laser diodes, having excellent temperature characteristics with emission wavelengths in the red spectral region and of 600 nm or smaller, and high brightness light emitting diodes with emission wavelengths in the visible spectral region. The light emitting device is fabricated on an n-GaAs substrate, which has the direction normal to the substrate surface is misoriented by 15 DEG from the direction normal to the (100) plane toward the [011] direction. On the substrate, there disposed by MOCVD, for example, are an n-GaAs buffer layer, an n-(Al0.7Ga0.3)0.51In0.49P cladding layer, an (Al0.2Ga0.8)0.49In0.51N0.01P0.99 active layer, a p-(Al0.7Ga0.3)0.51In0.49P cladding layer, and a p-GaAs contact layer.
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