发明名称 Process and apparatus for growing crystalline silicon plates by pulling the plate through a growth member
摘要 A process for growing a crystalline silicon plate, including the steps of arranging a planar growth member and a growth crucible in which a melt of silicon is placed and which is provided with a melt draw-out opening at a lower side thereof, while at least a tip portion of the growth member is located under the draw-out opening, drawing out the melt from the crucible through the draw-out opening, bringing the drawn out melt into contact with the tip portion of the growth member, and further pulling down the melt through the tip portion of the growth member.
申请公布号 US6072118(A) 申请公布日期 2000.06.06
申请号 US19970897945 申请日期 1997.07.24
申请人 NGK INSULATORS, LTD. 发明人 FUKUDA, TSUGUO;IMAEDA, MINORU;IMANISHI, YUICHIRO
分类号 C30B29/06;C30B15/00;C30B15/08;C30B15/24;H01L31/04;(IPC1-7):C30B15/34;H01L21/268 主分类号 C30B29/06
代理机构 代理人
主权项
地址