METHOD AND ARRANGEMENT FOR DEPOSITION OF A SEMICONDUCTOR MATERIAL

摘要

The invention relates to a method for depositing semiconductor material on a substrate in a reaction chamber (chemical vapour-phase transport). To this end, said semiconductor material is removed from a supply thereof and converted into halogenated gaseous intermediate products. The invention also relates to an arrangement for implementing said method. The aim of the invention is to provide a simple and robust method for depositing semiconductor material on a substrate in addition to an arrangement for implementing said method. This is achieved by means of a method characterised by the following steps: heating of the reaction chamber by means of inert gas, positioning of the substrate and semiconductor supply in relation to one another, starting of halogenation of the semiconductor material by replacing the inert gas stream by a gas stream of a carrier gas and halogenated gas, dehalogenation of the semiconductor material for the deposition on the substrate, concluding the deposition by switching to inert gas and by spatial separation of the coated substrate and the supply of semiconductor, cooling of the coated substrate.