发明名称 |
METHOD FOR FORMING A METAL FILM |
摘要 |
A method for forming a metal film for use in semiconductor devices on a substrate. A catalyst metal layer for facilitating formation of a metal film is formed first on a substrate using thermal chemical vapor deposition. Then, at least one source of the metal film is prepared as a gas phase. The metal film is formed on the catalyst metal layer by applying the gas phase source to the catalyst metal layer. According to the present invention, a metal film of uniform thickness can be formed on an uneven substrate surface or on a hole with a high aspect ratio. |
申请公布号 |
WO0013207(A3) |
申请公布日期 |
2000.06.02 |
申请号 |
WO1999KR00500 |
申请日期 |
1999.09.01 |
申请人 |
GENITECH CO., LTD.;KOH, WON-YONG;KANG, SANG-WON |
发明人 |
KOH, WON-YONG;KANG, SANG-WON |
分类号 |
H01L21/28;C23C16/18;C23C16/44;C23C16/455;H01L21/02;H01L21/285 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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