| 摘要 |
PROBLEM TO BE SOLVED: To control F relative to CF2 in a plasma and ion generation amount by utilizing a plasma comprising first and second electron temperature regions for etching with a film. SOLUTION: Related to an etching device using electron cyclotron resonance(ECR), an electron temperature is high in the ECR region (high electron temperature region 101), while a low electron temperature region 102 is formed at other part. The ECR region is narrower when the magnetic field gradient applied from outside is larger. Under a condition with a small magnetic field gradient, the F/CF2 generation ratio is small as the high electron temperature region 101 expands, while the F/CF2 generation ratio is larger with larger magnetic field gradient as the high electron temperature region 101 becomes narrower. By lowering the frequency of the introduced high frequency, the high electron temperature region 101 is widened for smaller/F/CF2 generation ratio. |
