发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
摘要 PROBLEM TO BE SOLVED: To prevent production of faulty embedding even when a metal film or the like is embedded in a connecting hole, by providing an anti-degassing insulating film for interrupting degassing from an organic insulating film on the inner wall of the connecting hole which is formed in an interlayer insulating film having at least an organic insulating film. SOLUTION: An organic insulating film 2 is formed in such a way that it covers wiring 1. An inorganic insulating film 3 is formed on the organic insulating film 2. In this way, an interlayer insulating film 4 comprises the organic insulating film 2 and the inorganic insulating film 3. Then a connecting hole is formed in the interlayer insulating film 4 reaching the wiring 1. Also, an anti-degassing insulating film 6 for interrupting the discharge of gas from the organic insulating film 2 is formed on the inner wall of the connecting hole 5. Further, a plug 7 is formed by embedding metal inside the connecting hole 5 and is connected to the wiring 1. Accordingly, since gas discharged from the organic insulating film 2 toward the connecting hole 5 can be blocked by the anti-degassing insulating film 6, no faulty embedding is caused.
申请公布号 JP2000150646(A) 申请公布日期 2000.05.30
申请号 JP19980320114 申请日期 1998.11.11
申请人 SONY CORP 发明人 HASEGAWA TOSHIAKI;IKEDA KOICHI
分类号 H01L21/768;H01L21/283;H01L21/31;H01L21/312;H01L23/522;(IPC1-7):H01L21/768 主分类号 H01L21/768
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