| 摘要 |
PROBLEM TO BE SOLVED: To provide a dry-etching method by which excessive chlorine radicals are suppressed and the side etching of an aluminum alloy layer is improved. SOLUTION: Resist is applied to a reflection preventive layer (titanium nitride film) 5 which is an uppermost layer, and a resist pattern group 6 is formed by a photolithography method. Then layered films are etched by using the resist pattern group 6 as a mask. First, mixed gas of Cl2 gas and BCl3 gas is used and the reflection preventive film 5 and an aluminum alloy layer 4 are successively etched from the upper layer side. After the excessive aluminum alloy layer 4 is completely removed by etching with the mixed gas of Cl2 gas and BCl3 gas, a barrier metal layer (TiN layer) 3 is etched by using mixed gas of BCl3 gas and CHF3 gas in a same etching chamber as a continuous treatment.
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