| 摘要 |
In a method of manufacturing a semiconductor light-emitting device composed of a II-VI compound semiconductor in which at least more than one kind of elements of Zn, Be, Mg, Cd or Hg are used as a II-group element and at least more than one kind of elements of Se, S, Te are used as a VI-group element and which includes first conductivity type and second conductivity type cladding layers and an active layer, a supply ratio VI/II ratio of VI-group element and II-group element required when the active layer is epitaxially deposited is selected to be greater than 1.1 and the active layer is deposited epitaxially. Thus, there may be obtained a highly-reliable semiconductor light-emitting device whose life time is made longer.
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