| 摘要 |
PURPOSE: A semiconductor device, such as NOR gat -type ROM(read only memory) is provided to easily achieve a small size and a high integration by minimizing an isolation region between each device. CONSTITUTION: A plurality of memory cells include a plurality of N-channel transistors(A)and a plurality of P-channel transistors(B). A channel part of the N-channel transistor(A) and a P-type drain(7a) of the N-channel transistor(B) are conjunctive used, and a channel part of the P-channel transistor(B) and the N-type source(5b) of the N-channel transistor(A) are also conjunctive used, thereby improving an integrated degree. Since the junction between adjacent P-type drain(7a) and N-type source(5b) is constantly held to the reverse bias, the P-type drain(7a) and the N-type source(5b) are isolated each other.
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