发明名称 |
TRANSISTOR AND SEMICONDUCTOR DEVICE |
摘要 |
A transistor using a transparent channel layer consisting of such material as zinc oxide and being transparent entirely or partially, wherein a channel layer (11) is formed of a transparent semiconductor such as zinc oxide ZnO, part or all of each of sources (12) and drains (13) or gates (14) use transparent electrodes, and the transparent electrodes use a transparent conductive material such as conductive ZnO formed by doping a group III element or the like. A gate insulating layer (15) uses a transparent insulating material such as insulating ZnO formed by doping a univalent element or a group V element. A substrate (16), if its transparency is desired, uses glass, sapphire, plastics or the like as a transparent material. |
申请公布号 |
WO0030183(A1) |
申请公布日期 |
2000.05.25 |
申请号 |
WO1999JP06300 |
申请日期 |
1999.11.11 |
申请人 |
JAPAN SCIENCE AND TECHNOLOGY CORPORATION;KAWASAKI, MASASHI;OHNO, HIDEO |
发明人 |
KAWASAKI, MASASHI;OHNO, HIDEO |
分类号 |
G11C11/401;H01L21/331;H01L27/15;H01L29/22;H01L29/51;H01L29/73;H01L29/78;H01L29/786;H01L33/28;H01S5/026 |
主分类号 |
G11C11/401 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|