| 摘要 |
PURPOSE: A device is provided to suppress the amount of a carbon compound among a film in the film formation with a CVD(Chemical Vapor Deposition) method using an organic metal complex or an organic metal material. CONSTITUTION: A device for forming a thin film is prepared with a reaction chamber(3) for performing a CVD, a vaporizer(5) for supplying raw material gas to the reaction chamber, a liquid pump(6) for forcibly sending the mixture of the raw material solution to the vaporizer, a mixer(7) for mixing each material solution and three raw solution tanks(8) for individually storing each raw material solution. Herein, a heating stand(2) is installed to heat a board(1) inside the reaction chamber, and the raw material solution that an organic metal complex is dissolved in a solvent is stored in each solution tank. Then, after the raw material solution is mixed by the mixer at a proper rate, the mixture is compressed to the vaporizer by the liquid pump and is vaporized in the vaporizer. Accordingly, the vaporized raw material gas is introduced into the reaction chamber, passing through an introduction hole(4) installed on an upper part of the reaction chamber.
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