| 发明名称 |
A METHOD OF DEPOSITING TUNGSTEN NITRIDE USING A SOURCE GAS COMPRISING SILICON |
| 摘要 |
A non-planar storage capacitor comprises a non-planar first capacitor electrode (40), a dielectric layer (45) and a second capacitor electrode (50) formed by a tungsten nitride layer overlying the dielectric layer. Preferably the tungsten nitride layer comprises silicon. <IMAGE> |
| 申请公布号 |
EP0742847(B1) |
申请公布日期 |
2000.05.24 |
| 申请号 |
EP19950941502 |
申请日期 |
1995.11.30 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
MEIKLE, SCOTT;DOAN, TRUNG |
| 分类号 |
C23C16/34;C23C16/46;H01L21/02;H01L21/28;H01L21/285;H01L21/768;H01L21/822;H01L21/8242;H01L27/04;H01L27/108 |
主分类号 |
C23C16/34 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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