发明名称 THIN FILM MAGNETIC SENSOR
摘要 PROBLEM TO BE SOLVED: To obtain a high-sensitivity magnetic sensor the characteristics of which are less degraded by a protective layer. SOLUTION: In a magnetic sensor, a semiconductor intermediate layer 13 is formed between an InxGa1-xAsySb1-y (0<x<=1 and 0<=y<=1) thin film 2 and a protective film 11 composed of an inorganic insulating layer. The layer 13 has an AlxIn1-xSb (0<x<=1) or GaAsxSb1-x (0<=x<=1) composition having a large band gap and electron mobility which is smaller than that of the InxGa1-xAsySb1-y thin film 2.
申请公布号 JP2000138403(A) 申请公布日期 2000.05.16
申请号 JP19990243975 申请日期 1999.08.30
申请人 ASAHI CHEM IND CO LTD 发明人 SHIBAZAKI ICHIRO;OKAMOTO ATSUSHI
分类号 G01B7/00;G01R33/07;G01R33/09;H01L43/06;H01L43/08;H01L43/12;(IPC1-7):H01L43/06 主分类号 G01B7/00
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