发明名称 |
THIN FILM MAGNETIC SENSOR |
摘要 |
PROBLEM TO BE SOLVED: To obtain a high-sensitivity magnetic sensor the characteristics of which are less degraded by a protective layer. SOLUTION: In a magnetic sensor, a semiconductor intermediate layer 13 is formed between an InxGa1-xAsySb1-y (0<x<=1 and 0<=y<=1) thin film 2 and a protective film 11 composed of an inorganic insulating layer. The layer 13 has an AlxIn1-xSb (0<x<=1) or GaAsxSb1-x (0<=x<=1) composition having a large band gap and electron mobility which is smaller than that of the InxGa1-xAsySb1-y thin film 2.
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申请公布号 |
JP2000138403(A) |
申请公布日期 |
2000.05.16 |
申请号 |
JP19990243975 |
申请日期 |
1999.08.30 |
申请人 |
ASAHI CHEM IND CO LTD |
发明人 |
SHIBAZAKI ICHIRO;OKAMOTO ATSUSHI |
分类号 |
G01B7/00;G01R33/07;G01R33/09;H01L43/06;H01L43/08;H01L43/12;(IPC1-7):H01L43/06 |
主分类号 |
G01B7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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