| 摘要 |
PROBLEM TO BE SOLVED: To provide a means for suppressing the formation of a notch or the occurrence of residue in plasma-etching with a metal film. SOLUTION: A substrate W to be processed, wherein a metal film 4 of Al, Al alloy, or Cu is formed on which a Ti-group antireflection film 5 is formed over which a photoresist film 6 is formed is provided in a process chamber, the inside of it is depressurized to a specified pressure, and an etching gas is supplied into it, while a plasma is generated in it for etching with a metal film. Here, the etching gas comprises Cl-containing gas and Cf-group gas containing C and F. Thus, the occurrence of a notch or residue is prevented or significantly reduced.
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