| 摘要 |
PROBLEM TO BE SOLVED: To prevent the diffusion of impurities, and besides, to form an insulat ing film low in interface level where fixed charge and unpaired coupling hands do not exist, by making a silicon oxide film being a gate insulating film contain phosphor. SOLUTION: A semiconductor layer where phosphor is mixed as impurities to give one conductivity type is made within a silicon oxide film 15 of a gate insulating film. Then, photolithography processing is applied using a specified mask pattern, and this doped semiconductor film is made as a gate electrode 20. The phosphor contained in the silicon oxide film 15 is made, for example, 1×1019-5×1026 cm-3, preferably, 1×1020-3×1020 cm-3. According to this constitution, the generation of fixed charge can be suppressed by gettering the impurities such as hydrogen ion, sodium ion, etc., and preventing the diffusion of these impurities.
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