METHOD OF FORMING GATE ELECTRODE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of forming a gate electrode of a semiconductor device is provided to prevent electrical characteristics of a doped polysilicon layer from being deteriorated by an undoped polysilicon by using a doped silicon having two phases caused by P ion injection in a polycide gate. CONSTITUTION: A method of forming a gate electrode having a polycide structure, comprises the steps of: forming a doped polysilicon layer(30) after forming a gate oxidation layer(20) on a substrate; forming a thin conductive silicon nitride layer(40) on the surface of the doped polysilicon layer; forming an undoped polysilicon layer(50) on the silicon nitride layer; forming a tungsten silicide layer(60) on the undoped polysilicon layer; doping the undoped polysilicon layer by injecting impurities into the entire tungsten silicide layer; and performing a succeeding thermal process after the impurity-injecting process.