METHOD OF FORMING METAL WIRING IN SEMICONDUCTOR DEVICE

摘要

PURPOSE: A metallization method is to improve the reliability of a device by forming a metal interconnection having a good step coverage and thereby reducing a fail rate of the device. CONSTITUTION: An insulating layer(2') is formed on a predetermined part of a silicon substrate(1). A contact part(2) is exposed by opening the insulating layer. A polysilicon layer is deposited on the contact part through a CVD to form a metal interconnection. A Ti layer(3) is deposited on the polysilicon layer. After sputtering the Ti layer by using a PVD method, the Ti layer is annealed by using an RTP under a nitrogen atmosphere. A lower part of the Ti layer is reacted with the polysilicon layer, thereby forming a TiSi2 layer(4). An upper part of the Ti layer is reacted with the polysilicon layer, thereby forming a TiN layer(5). Then, an aluminum layer(6) is deposited on the resultant structure, thereby forming a metal interconnection.