METHOD FOR FORMING AN ISOLATING LAYER OF SEMICONDUCTOR DEVICES

摘要

PURPOSE: An isolating layer formation method is provided to simplify manufacturing process by using a selective epitaxial growing instead of LOCOS(local oxidation) and STI(shallow trench isolation). CONSTITUTION: An insulating layer(32) is deposited on a semiconductor substrate(31) defined to an active region and a field region. By etching the insulating layer(32) using a photoresist pattern(33) as a mask, the insulating layer(32) is remained only on the field region. By selective epitaxial growing the exposed semiconductor substrate(31), an epitaxial layer(310) is formed on the active region and an isolating layer(320) is formed on the field region. Then, the epitaxial layer(310) is polished until the thickness thereof is same as the etched insulating layer(32).