| 摘要 |
PURPOSE: A thin film transistor is provided to reduce damage of the thin film transistor caused by hot carriers while maintaining advantages of polysilicon. CONSTITUTION: A thin film transistor(100) comprises: a substrate(1); a pair of first gate electrodes(2) separated from each other on the substrate; a first gate insulating layer(3) on the substrate to cover the first gate electrodes; a polysilicon layer(4) composed of a pair of highly doped regions(4a,4b) separated from each other and a channel region inserted between the highly doped regions, the polysilicon layer(4) being formed on the first gate insulating layer(3); a second gate insulating layer(5) formed on the polysilicon layer(4); a second gate electrode(8) formed on the gate insulating layer; a planarized insulating layer(9) formed on the second gate insulating layer to cover the second gate electrode; a source electrode(12) electrically contacted with one of the highly doped regions while the source electrode continuously penetrating the planarized insulating layer(9) and the second gate insulating layer, and being exposed to the upper surface of the planarized insulating layer; and a drain electrode(7) electrically contacted with the other of the highly doped regions while the drain electrode continuously penetrating the planarized insulating layer and the gate insulating layer, and being exposed to the upper surface of the planarized insulating layer.
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